The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Ó¢·ÉÁèK40H1203 / IKW40N120H3ÊÇÓ¢·ÉÁèµÚÈý´ú1200V¸ß¿ª¹ØËÙ¶ÈIGBTµ¥¹Ü, Äܹ»ÍêÃÀÌæ´úK40T120 / K40T1202 £¬×¨ÓÃÓÚº¸½Ó¡¢Ì«ÑôÄÜ·¢µçÄæ±äÆ÷ºÍUPSµÈIGBT¸ßƵӦÓÃÁìÓò¡£
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Low switching losses for high efficiency
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Fast switching behaviour with low EMI emissions
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Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
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Short circuit capability
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Excellent performance
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Low switching and conduction losses
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¼¯µç¼«Ö±Á÷µçÁ÷: 40A
¼¯µç¼«·¢Éä±¥ºÍµçѹ, Vce: 2.4V
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¹¤×÷ζÈ×î¸ßÖµ: 175°C
¼¯µç¼«·¢Éäµçѹ, Vceo: 1.2kV
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